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分类:现货   发布时间:2015-05-05 11:05:15   阅读:2117   信息来源:1mos

CJD01N60,TO-251-3L封装,600V/1W N-Channel Power MOSFET,CJD01N60规格书资料,主要用于充电器、备用电源等.

General Description:

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The
new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.


-Robust High Voltage Termination

-Avalanche Energy Specified
-Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
-Diode is Characterized for Use in Bridge Circuits
-IDSS and VDS(on) Specified at Elevated Temperature

Cell Photo Charger
Standby Power

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