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分类:MOSFET现货库存   发布时间:2015-07-31 03:07:13   阅读:8666   信息来源:1mos.com

CJU02N60 ,TO-252-2L封装,600V/2A/1.25W N-Channel Power MOSFET,CJU02N60 规格书资料.

General Description:
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

- Robust High Voltage Termination
-Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
-Diode is Characterized for Use in Bridge Circuits
-IDSS and VDS(on) Specified at Elevated Temperature

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