CJU01N60,TO-252-2L封装，600V/1.25W N-Channel Power MOSFET,CJU01N60规格书资料,主要用于充电器、备用电源等.
General Description:
The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The
new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES:
- Robust High Voltage Termination
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature