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分类:MOSFET现货库存   发布时间:2015-07-31 02:07:44   阅读:8515   信息来源:1mos.com

CJU01N60,TO-252-2L封装,600V/1.25W N-Channel Power MOSFET,CJU01N60规格书资料,主要用于充电器、备用电源等.

General Description:

The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The
new energy efficient design also offers a drain-to-source diode with a  fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.


- Robust High Voltage Termination
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature

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