CJ3400,封装SOT-23,印记R0,30V N-Channel Enhancement Mode MOSFET,CJ3400规格书资料
V(BR)DSS: 30V
RDS(on)MAX :35mΩ@10V, 40mΩ@4.5V,52mΩ@2.5V ID:5.8A
-High dense cell design for extremely low RDS(ON)
应用
-Load/Power Switching